050-5998 rev b 6-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. static electrical characteristics symbol bv dss v ds (on) i dss i gss g fs v gs (th) characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain voltage 1 (i d (on) = 4.5a, v gs = 10v) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 25v, i d = 4.5a) gate threshold voltage (v ds = v gs , i d = 50ma) min typ max 500 5.0 25 250 100 4635 unit volts ana mhos volts symbol v dss i d v gs p d r jc t j ,t stg t l parameterdrain-source voltage continuous drain current @ t c = 25c gate-source voltagetotal power dissipation @ t c = 25c junction to caseoperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. arf463a/b (g) 500 9 30 180 0.70 -55 to 150 300 unit volts amps volts watts c/w c rf power mosfets n - channel enhancement mode 125v 100w 100mhz the arf463a and arf463b comprise a symmetric pair of common source rf power transistors designed for push-pull scientific, commercial, medical and industrial rf power amplifier applications up to 100 mhz. they have been optimized for both linear and high efficiency classes of operation. specified 125 volt, 81.36 mhz characteristics: output power = 100 watts. gain = 15db (class ab) efficiency = 75% (class c) low cost common source rf package. low vth thermal coefficient. low thermal resistance. optimized soa for superior ruggedness. to-247 arf463a (g) arf463b (g) g d s commonsource caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com *g denotes rohs compliant, pb free terminal finish. downloaded from: http:///
050-5998 rev b 6-2003 30 45 60 75 90 105 120 frequency (mhz) figure 1, typical gain vs frequency class c v dd = 150v p out = 150w 3025 20 15 10 50 gain (db) dynamic characteristics arf463a/b(g) symbol c iss c oss c rss t d(on) t r t d(off) t f characteristicinput capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 50v f = 1 mhz v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25c r g = 1.6 min typ max 1200 1600 140 200 91 2 5.1 10 4.1 8 12.8 20 48 unit pf ns functional characteristics symbol g ps test conditions f = 81.36 mhz i dq = 50ma v dd = 125v p out = 100w no degradation in output power characteristiccommon source amplifier power gain drain efficiency electrical ruggedness vswr 10:1 min typ max 13 15 60 65 unit db % 1 pulse test: pulse width < 380 s, duty cycle < 2%apt reserves the right to change, without notice, the specifications and information contained herein. 1 10 100 500 1210 86 4 2 0 0123456 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 30001000 500100 5010 .1 .5 1 5 10 50 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = -55c t j = +125c t j = +25c t c =+25c t j =+150c single pulse operation here limited by r ds (on) c iss c oss c rss 3610 51 .5.1 1ms10ms 100ms dc 100us downloaded from: http:///
050-5998 rev b 6-2003 t c , case temperature (c) figure 5, typical threshold voltage vs temperature v ds , drain-to-source voltage (volts) figure 6, typical output characteristics 1.21.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 i d , drain current (amperes) v gs(th) , threshold voltage (normalized) arf463a/b (g) 5.5v 4.5v 4v 5v v gs =15 & 10v 6v 8v 2520 15 10 50 table 1 - typical class ab large signal input - output impedance freq. (mhz) z in ( ) z ol ( ) 2.0 13.5 27 40 65 80 100 24 - j 5.0 7.8 - j 11 2.1 - j 6.4 .74 - j 3.3 .30 + j .42 .46 + j 2.0 .87 + j 3.7 55 - j 4.8 41 - j 24 23 - j 26.2 13.6 - j 22 6.1 - j 14.2 4.2 - j 10.7 2.7 - j 7.1 z in - gate shunted with 25 !! i dq = 50ma z ol - conjugate of optimum load for 100 watts output at v dd = 125v figure 9b, transient thermal impedance model z jc , thermal impedance (c/w) note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse 0.5 0.1 0.3 0.7 0.90.05 0.800.70 0.60 0.50 0.40 0.30 0.20 0.10 0 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 9a, typical maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.1470.231 0.321 0.00259f0.00818f 0.127f power (watts) junction temp. ( c) rc model case temperature downloaded from: http:///
050-5998 rev b 6-2003 to-247 package outline arf463a/b (g) 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 3.55 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) source 2-plcs. top view arf - a device arf - b gate drain source source drain gate dimensions in millimeters and (inches)note: these two parts comprise a symmetric pair of rf power transistors and meet the same electricalspecifications. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. l1 c1 r2 r1 dut l2 l3 c5 c4 c6 c5 l4 125v + - rf output rf input c1 -- 820pf unelco mounted at gate lead c2-c5 -- arco 463 mica trimmer c5-c8 -- 10nf 500v cog chip l1 -- 3t #18 .3" id .25"l ~50nh l2 -- 3t #16 awg .25" id .3"l ~58nh l3 -- 10t #18 awg .25 id ~470nh l4 -- vk200-4b ferrite choke ~3uh r1-r2 -- 50 ohm 1/2w carbon dut = arf463a/b 81.36 mhz test circuit c2 c3 bias 0 - 12v c7 c8 hazardous material warning the ceramic portion of the device between leads and mounting surface is beryllium oxide, beo. beryllium oxide dust is toxic when in- haled. care must be taken during handling and mounting to avoid damage to this area . these devices must never be thrown away with general industrial or domestic waste. e3 100% sn plated downloaded from: http:///
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